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Monday, April 27, 2020 | History

4 edition of Grain boundary characterization and electrical resistivity studies of high purity copper found in the catalog.

Grain boundary characterization and electrical resistivity studies of high purity copper

Betty-Ann McLaughlin

Grain boundary characterization and electrical resistivity studies of high purity copper

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  • 10 Currently reading

Published by National Library of Canada in Ottawa .
Written in English


Edition Notes

Thesis (M.A.Sc.)--University of Toronto, 1993.

SeriesCanadian theses = Thèses canadiennes
The Physical Object
FormatMicroform
Pagination1 microfiche : negative.
ID Numbers
Open LibraryOL15520855M
ISBN 100315925132
OCLC/WorldCa35945970

Cu thin films were deposited on Si substrates using direct current (DC) magnetron sputtering. Microstructure evolution and mechanical properties of Cu thin films with different annealing temperatures were investigated by atomic force microscopy (AFM), X-ray diffraction (XRD), and nanoindentation. The surface morphology, roughness, and grain size of the Cu films were characterized by by:   Electrical conductivity is the reciprocal quantity of resistivity. Conductivity is a measure of how well a material conducts an electric current. Electric conductivity may be represented by the Greek letter σ (sigma), κ (kappa), or γ (gamma). Electronic properties of grains and grain boundaries in graphene grown by chemical vapor deposition Luis A. Jaureguia,b, Helin Caoa,c, Wei Wud,e, Qingkai Yud,e,f, Yong P. Chenc,a,b,* a Birck Nanotechnology Center, Purdue University, West Lafayette, IN , USA b School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN , USA.   Standard Reference Materials: The eddy current decay method for resistivity characterization of high purity metals Item Preview remove-circle Share or Embed This Item.

Solute segregation at grain boundaries has been correlated with grain-boundary conductivity in high-purity mol%-CaO-stabilized ZrO{sub 2}. STEM measurements of solute coverage show that the segregation of impurity silicon (present at bulk levels grain-size dependent.


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Grain boundary characterization and electrical resistivity studies of high purity copper by Betty-Ann McLaughlin Download PDF EPUB FB2

Grain boundary characterization and electrical resistivity studies of high purity copper book SPS () Grain-boundary resistivity in zirconia-based materials - effect of sintering temperatures and impurities. Badwal SPS, Rajendran S () Effect of microstructures and nanostructures on the properties of ionic conductors.

Badwal SPS () Zirconia-based solid electrolytes - microstructure. The residual resistivity of a single crystal of this material obtained by extrapolation to zero grain boundary area, is 5 x ohm cm. Single crystals of high purity copper from the same source, have been grown (2], which had residual resistivities of about this by:   Electrical resistivity (ρ) of samples with different grain sizes, made from iron of three different purities (containing a maximum of 34, 79, and atomic ppm impurities, respectively), has been studied at °K in the presence of applied longitudinal magnetic fields up to 60 by: Such a high electron reflection at the grain boundaries is considered to greatly reduce the electrical conductivity.

The individual reflection coefficient for every nanofilm is found to be within the range of – It should be noted that the out-of-plane mean grain sizes ob-tained from XRD studies in the present work are used in theFile Size: KB.

Another study mentions that the specific resistivity in pure Cu for low angle grain boundary is × 10 −12 Ωcm 2 and for high angle grain boundary is × 10 −12 Ωcm 2 effect of low and high angle grain boundaries on electrical conductivity of pure Cu If we follow this approach, as the Fe content increased in the CFAs in our study Cited by: 4.

The high electrical conductivity of copper is preserved because neither the dispersion of particles nor the small grain size greatly degrade it the grain size of the copper matrix is refined. This study explores where gb is the specific grain boundary resistivity and for Cu Grain boundary characterization and electrical resistivity studies of high purity copper book =×10−16 m [15].

The ratio S/V is the grain boundary. Resistivity of metal line and thickness of Cu barrier layer with technology nodes [40]. The first factor that increases the resistivity of the metal line is grain boundary scattering.

The smaller gain size in Cu lines results in more grain boundaries, leading to an increased by: 3. Grain boundary sliding and migration in copper: the effect of vacancies.

Ballo a,*, V. Slugenˇ b. a Department of Physics, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology, Ilkovicova 2, 19 Bratislava, Slovak Republic.

High Purity Copper Wire Akihito Kurosaka, Nobuo Tanabe, Osamu Kohno and Hiroshi Osanai Keywords: high-purity, copper, wire, zone-refining, electrorefining, drawing, recrystallization Electrical Resistivity of Commercial and High Purity Titanium Shin-ya. generally employed to reduce electrical resistivity during processing [13].

Thus, materials engineers are often faced with a compromise be-tween thermal stability, Grain boundary characterization and electrical resistivity studies of high purity copper book conductivity, mechanical reliability, and the feasibility of high temperature processing in cases where flexi.

Evidences of grain boundary capacitance effect on the colossal dielectric permittivity in (Nb + In) co-doped TiO2 ceramics and grain-boundary impedance in high-purity Cited by: Through resistivity and grain size characterization on copper wires with sizes down to 95× nm2 in a temperature range of to K, it was found that the influence of surface scattering is.

Electrical resistivity of ultrafine-grained copper with nanoscale growth twins X. Chen, L. Lu,a and K. Lu Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, ShenyangPeople’s Republic of China.

sub-grain boundaries tend to annihilate the photocurrent and incoherent grain boun- daries decrease the photocurrent and increase the resistivity. ELECTRICAL PROPERTIES OF GRAIN BOUNDARIES IN METALS 1- Experimental studies.

The increase of resistivity induced by grain boundaries can be neasured by two methods. For example, brittleness and high electrical resistivity appear in the electroplated copper Grain boundary characterization and electrical resistivity studies of high purity copper book film.

The reason for the large variation of physical properties is that the electroplated copper thin-films mainly consist of fine columnar grains with low crystallinity and porous grain boundaries which areFile Size: KB. An ultrafine grained (UFG) structure has been obtained in commercial purity Al by high-pressure torsion (HPT).

Changes in microhardness and electrical resistivity of the UFG material after. Through resistivity and grain size characterization on copper wires with sizes down to 95×  nm 2 in a temperature range of to K, it was found that the influence of surface scattering is less than previously speculated, while grain-boundary scattering is by: Excess Volume at Grain Boundaries in hcp Metals J.

Cao and W. Geng School of Materials Science & Engineering, University of Science and Technology Beijing, BeijingChina Abstract The excess volume associated with grain boundaries represents a key structural parameter for the characterization of grain boundaries.

Dr Rossiter, well-known for his work on the electrical resistivity of alloys, has written a book which blends results and theory, but does not rely on a strong grounding in quantum mechanics. After an introduction to the basic ideas, the concepts of atomic and magnetic correlations and their microstructural consequences are : Paul L.

Rossiter. Single-atom-thick graphene sheets can now be produced at metre scales, bringing large-area applications in electronics and photovoltaics closer. But such large pieces can be expected to be Cited by: This paper presents the experimental and theoretical study on the effects of electron scattering at grain and boundaries on the reduction of effective thermal conductivity.

The present study measures the electrical resistivity and lateral thermal conductivity of thin copper layers of thicknesses 50 and nm at temperatures between 40 and K, using Joule heating and electrical-resistance.

Electrical Characterization in the Phase Transition between Cubic PbCrO 3 Perovskites at High Pressures To cite this article: Wang Wen-Dan et al Chinese Phys. Lett. 30 View the article online for updates and enhancements. Related content In Situ High-Pressure Synchrotron X-Ray Diffraction Study of ClinozoisiteCited by: 6.

The five-parameter grain boundary character distribution of nanocrystalline tungsten Xuan Liu,a Dooho Choi,a Hossein Beladi,b Noel T. Nuhfer,a Gregory S. Rohrer,a and Katayun Barmakc,⇑ aDepartment of Materials Science and Engineering, Carnegie Mellon University, Forbes Avenue, Pittsburgh, PAUSA bInstitute for Frontier Materials, Deakin University, Geelong, VICAustralia.

An inverse relationship between film thickness and electrical resistivity has been commonly demonstrated by FS surface scattering and MS grain boundary scattering models. According to the FS model [ 35, 36 ], the electrical resistivity in thin film is given for the following equation: where is the film thickness, is the electron mean free path Cited by: 1.

formed on high-purity copper samples with a known grain boundary density/distribution (grain size) to examine the relationship between these defect characteristics and void growth. Characterization of the resultant damage is per-formed via standard optical and electron backscatter diffrac-tion (2D) analyses, along with micro x-ray tomography.

Calculated Resistances of Single Grain Boundaries in Copper Mathieu César,1 Dongping Liu,1,2 Daniel Gall,3 and Hong Guo1 1Centre for the Physics of Materials and Department of Physics, McGill University, Montréal, Québec, H3A 2T8, Canada 2Institute of Physics, Chinese Academy of Sciences, BeijingPeople’s Republic of China 3Department of Materials Science & Engineering, Cited by: Abstract The electrical resistivity of high purity Cu, Zn and Co has been measured at pressures (P) up to 5GPa and at temperatures (T) in the liquid phase.

The electrical resistivity of solid state Nb was also measured up to 5GPa and ~K. All measurements were made in a large volume cubic anvil press.

Using two thermocouples placed at opposite ends of the sample wire, serving as temperature Author: Innocent Chinweikpe Ezenwa. Nanotwinned (NT) materials have been the subject of intensive study for years because of their unique microstructure and properties 1,2,3,ered coherent and stable internal boundaries allow for substantial strength and optimum electrical conductivity while preserving acceptable levels of ductility of these desirable properties stem from the nature of high densities of {} 3 twin Cited by: 7.

composites with both high strength and high ductility is a very important research topic. The alloying elements can increase the strength of copper, though by their introduction the electrical resistivity increases significantly. In the case of long-term use of light metal (e.g.

Al) based composites strengthening effect. The electrical properties of Cu thin films with different thicknesses from 50 to nm were investigated. Fig. 6 shows the dependence of the Cu film resistivity on thickness. The Cu thin film with 50 nm thickness has the highest resistivity value of µΩ-cm and the resistivity for thicker film of 90 nm is reduced to µΩ by: 4.

measurements of the properties of YBa2Cu3O7-d grain boundaries above Tc. The results show a strong dependence of the change of resistance with temperature on grain boundary angle.

Analysis of our results in the context of band-bending at the boundary allows us to estimate the height of the potential barrier present at the grain boundary by: 9.

A New Electrochemical Approach for the Synthesis of Copper-Graphene Nanocomposite Foils with High Hardness. The electrical resistivity of these composites is also reported to be in the same order as that of pure Cu. where they spread around the grains through grain boundaries to achieve an improved interface with Cu throughout the by: Abstract The electrical resistivity of irons containing different levels of impurity have been measured at 77° and °K for a range of grain sizes.

The resistivity of a given iron is found to vary with the grain diameter (d mm) as ρ = A+B log(1/d). A and B are both temperature dependent, increasing with increasing temperature. The electrical resistivity of high purity Cu, Zn and Co has been measured at pressures (P) up to 5GPa and at temperatures (T) in the liquid phase.

The electrical resistivity of solid state Nb was also measured up to 5GPa and ~K. All measurements were made in a large volume cubic anvil : Innocent Chinweikpe Ezenwa. The grain boundary character distribution (GBCD) and its effect on the corrosion resistance of copper and brass (H65, H80) after solid solution and cold-rolled annealing were investigated by means of static weight loss method, scanning electron microscope (SEM), energy dispersive spectroscopy (EDS) and Electron back-scattered diffraction (EBSD).The possible mechanism of the effect of Cited by: 1.

The grain boundaries themselves are full of vacancies, and the free volume released by grain growth as the result of grain boundary elimination creates sizeable voids [5].

Also, the grain boundary is one of the fast diffusion paths in copper interconnect, and the diffusivities are influenced by the misorientation angle of grain boundaries [6, 7]. A grain boundary is the interface between two grains, or crystallites, in a polycrystalline material.

Grain boundaries are 2D defects in the crystal structure, and tend to decrease the electrical and thermal conductivity of the material. Most grain boundaries are preferred sites for the onset of corrosion and for the precipitation of new phases from the solid.

They are also important to many of the mechanisms of creep. Grain Bounda y Character Distribution and Intergranular Corrosion in High Purity Alumhum Simon S. Kim Master of Applied Science, Department of Metallurgy and Materials Science, University of Toronto Corrosion tests at three different concentrations of aqueous HCI (8%, 16% and 38%) were performed in order to investigate the intergranular corrosion susceptibility ofCited by: Lecture two: Electrical Resistivity of Materials Figure (4): The copper – nickel phase diagram.

Example – 4: Estimate the electrical conductivity of a Cu-Ni alloy that has a yield strength of MPa. Example – 4Solution: Example 5: The electrical resistivity of a beryllium alloy containing 5 at% of an alloying element is found to be 50 × at ° Size: KB.

These analyses further evidence the absence of amorphous regions in the melt-spun ribbons and the precipitation of elemental Te at the grain boundaries. Low-temperature electrical resistivity and thermopower measurements (20– K) carried out on several randomly-selected ribbons confirm the excellent reproducibility of the MS by: 2.

pdf Grain Pdf and Current Flow. Smart attributes have been designed into the grain boundaries of some conductor materials so that they are stable when conducting large currents. Electrical conductivity depends on both the density and the mobility of the charge carriers in a material.

Figure 1a shows current flow through a homogeneous material.Electrical resistivity and download pdf inverse, electrical conductivity, is a fundamental property of a material that quantifies how strongly it resists or conducts electric current. A low resistivity indicates a material that readily allows electric current.

Resistivity is commonly represented by the Greek letter ρ. The SI unit of electrical resistivity is the ohm-meter. For example, if a 1 m × 1 m × 1 m solid cube of material has.

Ebook have shown that the continuous films were formed by connecting randomly ebook, irregular-shaped, and micrometer-sized graphene flakes, resulting in the presence of a large amount of both low- and high-angle grain boundaries composed of pentagons and heptagons, which leads to a dramatic degradation in electronic properties compared Cited by: